1.6 kV 4H-SiC Schottky diodes for IGBT applications

Publication
8th International Conference on Power Electronics and Variable Speed Drives
Record type
Proceedings article
Published
2000
Authors
C.M. Johnson
DOI
https://doi.org/10.1049/cp:20000252
The publisher of this work supports multiple resolution. The work is available from the following locations:
theiet.org
ieee.org

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https://doi.org/10.1049/cp:20000252
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