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{'doi': '10.1049/el:19900228', 'member_id': '265', 'member': 'Institution of Engineering and Technology (IET)', 'container-title': 'Electronics Letters', 'primary-resource': 'http://digital-library.theiet.org/doi/10.1049/el%3A19900228', 'tld': 'theiet.org', 'clearbit-logo': 'https://logo.clearbit.com/theiet.org', 'coaccess': [], 'multiple-resolution': [], 'type': 'JOURNAL ARTICLE', 'published_date': '15 March 1990', 'publication': 'Electronics Letters', 'title': 'Vertical integration of an In\n <sub>0.15</sub>\n Ga\n <sub>0.85</sub>\n As modulation-doped field effect transistor and GaAs laser grown by molecular beam epitaxy', 'name': None, 'id': None, 'location': None, 'display_doi': 'https://doi.org/10.1049/el:19900228', 'grant_info': None, 'grant_info_funders': None, 'grant_info_funder_ids': '', 'grant_info_type': None, 'multiple_lead_investigators': [], 'multiple_co_lead_investigators': [], 'multiple_investigators': [], 'finances': [], 'project_description': None, 'award_amount': None, 'award_start': None, 'funding_scheme': None, 'internal_award_number': None, 'editors': None, 'authors': 'S.D. Offsey | P.J. Tasker | W.J. Schaff | L. Kapitan | J.R. Shealy | L.F. Eastman', 'chairs': None, 'supplementary_ids': '10.1049/el:19900228'}
https://doi.org/10.1049/el:19900228
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